Growth of Hg _xCdxTe single crystals by travelling heater method under accelerated crucible rotation conditions
نویسنده
چکیده
The accelerated crucible r9tation technique (ACRT) has been applied to the THM growth of Hg I _xCdxTe crystals to grow the crystals at a higher rate. These higher growth rates, which should be achieved by extending the regions of convectional stirring towards the interfaces, have been used in an attempt to explain the results in terms of simple constitutional supercooling arguments. Some different ACRT cycles which fulfil simple hydrodynamic and geometric criteria have been studied. The grown crystals were investigated with respect to their metallurgical homogeneity and their structural perfection. These properties have not been degraded by increasing the growth rate fi'om 1.5 to 8.5 mm per day.
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